Chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

Abstract

Inorganic lead halide perovskites are attractive optoelectronic materials owing to their relative stability compared to organic cation alternatives. The chemical vapor deposition (CVD) method offers potential for high quality perovskite film growth. The deposition temperature is a critical parameter determining the film quality owing to the melting difference between the precursors. Here, perovskite films were deposited by the CVD method at various temperatures between 500−800 °C. The perovskite phase converts from CsPb2Br5 to CsPbBr3 gradually as the deposition temperature is increased. The grain size of the perovskite films also increases with temperature. The phase transition mechanism wa..